Electrical stability of multilayer MoS2 fieldeffect transistor under negative bias stress at various temperatures
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منابع مشابه
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently rep...
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